? 2002 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 550 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 550 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c44a i dm t c = 25 c, pulse width limited by t jm 176 a i ar t c = 25 c44a e ar t c = 25 c60mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 10 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque to-264 0.4/6 nm/lb.in. weight plus 247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250ua 550 v v gs(th) v ds = v gs , i d = 4ma 2.5 4.5 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss 100 a v gs = 0 v t j = 125 c 2 ma r ds(on) v gs = 10 v, i d = 0.5 i d25 120 m ? note 1 98918 (04/02) plus 247 tm (ixfx) g d (tab) g = gate d = drain s = source tab = drain s g d (tab) to-264 aa (ixfk) advance technical information hiperfet tm power mosfets q-class single mosfet die n-channel enhancement mode avalanche rated, low qg high dv/dt, low t rr features ixys advanced low q g process low gate charge and capacitances - easier to drive - faster switching international standard packages low r ds (on) rated for unclamped inductive load switching (uis) rated molding epoxies meet ul 94 v-0 flammability classification applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control temperature and lighting controls advantages plus 247 tm package for clip or spring mounting space savings high power density v dss = 550 v i d25 = 44 a r ds(on) = 120 m ? ? ? ? ? t rr 250 ns ixfk 44n55q ixfx 44n55q
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 note 1 30 45 s c iss 6400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 850 pf c rss 180 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 20 ns t d(off) r g = 1 ? (external), 75 ns t f 10 ns q g(on) 190 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 40 nc q gd 86 nc r thjc 0.26 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 44 a i sm repetitive; 176 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 1.0 c i rm 8a i f = 25a,-di/dt = 100 a/ s, v r = 100 v dim. millimeter i nches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline note: 1. pulse test, t 300 s, duty cycle d 2 % ixfk 44n55q ixfx 44n55q to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
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